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| inchange semiconductor product specification silicon npn power transistors 2N3441 description with to-66 package continuous collector current-i c =3a power dissipation -p d =25w @t c =25 applications for use in general-purpose switching and linear amplifier applications such as: driver for high power outputs series and shunt regulators audio and servo amplifiers solenoid and relay drivers power switching circuits pinning (see fig.2) pin description 1 base 2 emitter 3 collector absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 160 v v ceo collector-emitter voltage open base 140 v v ebo emitter-base voltage open collector 7 v i c collector current 3 a i b base current 2 a p d total power dissipation t c =25 25 w t j junction temperature 200 t stg storage temperature -65~200 thermal characteristics symbol parameter max unit r (th) jc thermal resistance junction to case 7.0 /w fig.1 simplified outline (to-66) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2N3441 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 140 v v ce(sat) collector-emitter saturation voltage i c =2.7a; i b =0.9a 6.0 v v be(on) base -emitter on voltage i c =2.7a ; v ce =4v 6.7 v i cex collector cut-off current v ce =140v;v be(off) =1.5v v ce =140v;v be(off) =1.5v t c =150 5.0 6.0 ma i ceo collector cut-off current v ce =140v; i b =0 10 ma i ebo emitter cut-off current v eb =7v; i c =0 1.0 ma h fe-1 dc current gain i c =0.5a ; v ce =4v 25 100 h fe-2 dc current gain i c =2.7a ; v ce =4v 5 inchange semiconductor product specification 3 silicon npn power transistors 2N3441 package outline fig.2 outline dimensions |
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